http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101908472-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2010-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-101908472-B |
| titleOfInvention | Embed nanocrystalline method for preparing semi-conducting material in a insulating layer |
| abstract | The invention provides and a kind ofly embed nanocrystalline method for preparing semi-conducting material in a insulating layer, comprise the steps: to provide device substrate and support substrates, there is in described device substrate etch-stop layer; Select to form insulating barrier on one or two surface of device substrate and support substrates; Inject nanocrystalline modified ion in a insulating layer; By insulating barrier, device substrate and support substrates are bonded together; Implement the annealing after bonding to reinforce; Etch-stop layer is utilized device substrate to be thinned to target thickness to form device layer at surface of insulating layer.The invention has the advantages that, by the ingenious adjustment to process sequence, under the prerequisite not affecting other techniques, the step adjustment forming nanocrystalline adopted ion implantation is implemented before bonding, thus the perfection of lattice of device layer can not be had influence on, improve the crystal mass of prepared SOI material. |
| priorityDate | 2010-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.