Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fc6220b93fae4be14ada49e4ecc1860b |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F1-44 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-38 |
filingDate |
2008-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2013-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a73053524958bd9ce80ac51e1cd91c4b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36b0d59e692aed76c3c4599ac4819234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_107b2a347f4c745ae43592b3f7b5f4b2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_48414084ee757282862d01f622bd873f |
publicationDate |
2013-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-101903988-B |
titleOfInvention |
Etching agent, etching method and liquid for preparing etching agent |
abstract |
Disclosed is an etching agent for semiconductor substrates, which is capable of etching a titanium-based (Ti-based) metal film or a tungsten-based (W-based) metal film on a semiconductor substrate. The etching agent for semiconductor substrates is composed of a solution containing (A) hydrogen peroxide, (B) a phosphonic acid chelating agent having a hydroxyl group, (C) a basic compound, and (D-1) a copper anticorrosive and/or (D-2) 0.01-3% by weight of two or more anion species other than phosphonic acid chelating agents having a hydroxyl group, which anion species have no oxidizing power. |
priorityDate |
2007-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |