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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-34
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filingDate 2008-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2015-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-101809669-B
titleOfInvention Phase-changing memory unit and method
abstract A kind of phase change memory structure, comprising: the first electrode; Be positioned at the well heater on the first electrode, wherein, described well heater comprises the first post and the second post, and each in described first post and described second post comprises top side and bottom side; Phase-change material, described phase-change material is around the horizontal side part of described first post, between the described top side that the described horizontal side part of described first post is positioned at described first post and described bottom side, described phase-change material around the horizontal side part of described second post, between the described top side that the described horizontal side part of described second post is positioned at described second post and described bottom side; And the second electrode be positioned on described well heater and described phase-change material, described first electrode is at least electrically coupled to described second electrode via described phase-change material.
priorityDate 2007-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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