http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101807638-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-44 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12 |
| filingDate | 2010-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17323325080eacd5af10c289d5b0614b |
| publicationDate | 2014-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-101807638-B |
| titleOfInvention | Semiconductor light emitting device |
| abstract | Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers, a second electrode layer below the light emitting structure, a channel layer between the light emitting structure and an edge area of the second electrode layer, a buffer layer on the channel layer, and a passivation layer on the buffer layer. |
| priorityDate | 2009-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.