http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101777615-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac31afbea1cbbb03498644721ffb4a62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3561272cbc9e43b10993af730cb100d8 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 |
| filingDate | 2010-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69f0ac50fb615c16d9de60d52fffd6de http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f77a143be2eca040791f493bd627a261 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9af06a786eeb23bf4bf6cccc836d100a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dbbe90716657dd23d8fa7bcaa043a477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f11578c4f3e318b183ee2c3ccc49024a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_66972bcdde6d052e868faf19ca69b84e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a26a7390044f817363e7e9f6a35ec62a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9a7789354ab40c799246657bcc8b2a1e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6cdc9532b050f4d6f0d029ca4ee4bc3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_879ef15b9ca66feb57a12efb80e0e3ef http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8eeb32ff8011c41d91b30e27dfc6f32f |
| publicationDate | 2013-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-101777615-B |
| titleOfInvention | Method for preparing GaN substrate with porous surface and GaN substrate prepared by using the method |
| abstract | The invention relates to a method for preparing a GaN substrate with a porous surface and a GaN substrate prepared by using the method. A porous structure is directly prepared on the surface of the GaN substrate by a wet etching method with simple process, low damage and high etching rate. The method for preparing a GaN substrate with a porous surface comprises the following steps of: a, plating a layer of aluminum film on the GaN layer on the surface of the GaN substrate; b, applying voltage in acid solution in an electrochemistry cell, and realizing anodic oxidation by an electrochemistry method so that the aluminum film becomes porous alumina; c, applying voltage continuously to 60-200V, etching the surface of the GaN substrate by the electrochemistry method and forming a porous structure on the surface of the GaN layer; and d, removing oxide on the surface to obtain the GaN substrate with a porous surface. In the invention, a disorder and porous structure on the surface of the GaN substrate is designed and prepared so that the optical propagation of the GaN-air interface is randomized, the total reflection of the interface is reduced to the maximum extent, and the light extraction efficiency is greatly improved. |
| priorityDate | 2010-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.