http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101724910-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac31afbea1cbbb03498644721ffb4a62 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-34 |
| filingDate | 2009-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08f532620f0e9cbbe5099bf7c9b62e38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34211cecbf0a87ac2ce1c9f29d038dc3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99ea04b5328d804652fc557096bd63a7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46ca5fd54fb1f95f176b2d19ad924107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e693bbf89f585cbc81db86b113801b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0ebf5d1b6aacd093c263e66c8045f05 |
| publicationDate | 2015-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-101724910-B |
| titleOfInvention | Method for eliminating surface defects of GaN thick film material |
| abstract | The invention relates to a method for eliminating surface defects of a GaN thick film material with a simple and effective process. The method for eliminating the surface defects of the GaN thick film material comprises the step of putting the GaN thick film material in the atmosphere of mixed gas comprising hydrogen and ammonia for annealing treatment, wherein in the mixed gas atmosphere, the volume percent of the hydrogen is 0.1 percent to 99.9 percent, and the volume percent of the ammonia is 0.1 percent to 99.9 percent; and the annealing treatment is carried out in the mixed gas atmosphere with air pressure of 1K to 1MPa at the temperature of between 500 and 1,500 DEG C for 5 seconds to 500 minutes. When the thickness of the GaN thick film material is between 5 and 10 microns, the material is particularly suitable for the method. The method has the advantages of capability of effectively eliminating the surface defects and polishing damage of the GaN thick film material, capability of removing the oxide coating on the surface of the GaN thick film material, and capability of releasing the stress which may exists in the GaN thick film material to a certain extent. |
| priorityDate | 2009-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.