| abstract |
The invention discloses a cleanout fluid for removing photoresist layer residue, which is characterized by containing N,N-diethylethanolamine, other hydramine solvents, water and chelating agent. The cleanout fluid has low corrosion rate to nonmetal and metal and can remove photoresist residues on wafers. Therefore, the novel cleanout fluid has favourable application prospect in the field of micro-electronics, such as metal cleaning, semiconductor chip cleaning and the like. |