http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101626024-B

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filingDate 2009-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e719ac35e184b31cab0b0e2df294550
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publicationDate 2013-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-101626024-B
titleOfInvention Semiconductor device
abstract The invention is to improve the performance of a protection circuit including a diode formed using a semiconductor film. A protection circuit is inserted between two input/output terminals. The protection circuit includes a diode which is formed over an insulating surface and is formed using a semiconductor film. Contact holes for connecting an n-type impurity region and a p-type impurity region of the diode to a first conductive film in the protection circuit are distributed over the entire impurity regions. Further, contact holes for connecting the first conductive film and a second conductive film in the protection circuit are dispersively formed over the semiconductor film. By forming the contact holes in this manner wiring resistance between the diode and a terminal can be reduced and the entire semiconductor film of the diode can be effectively serve as a rectifier element.
priorityDate 2008-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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