http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101626024-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1277 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-528 |
filingDate | 2009-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2013-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e719ac35e184b31cab0b0e2df294550 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d88d74d5426016fad02c03975c59eef9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f8f78e96e5c7528c8d89692e631f533 |
publicationDate | 2013-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-101626024-B |
titleOfInvention | Semiconductor device |
abstract | The invention is to improve the performance of a protection circuit including a diode formed using a semiconductor film. A protection circuit is inserted between two input/output terminals. The protection circuit includes a diode which is formed over an insulating surface and is formed using a semiconductor film. Contact holes for connecting an n-type impurity region and a p-type impurity region of the diode to a first conductive film in the protection circuit are distributed over the entire impurity regions. Further, contact holes for connecting the first conductive film and a second conductive film in the protection circuit are dispersively formed over the semiconductor film. By forming the contact holes in this manner wiring resistance between the diode and a terminal can be reduced and the entire semiconductor film of the diode can be effectively serve as a rectifier element. |
priorityDate | 2008-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.