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publicationDate 2010-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-101622694-A
titleOfInvention Use surface tension to reduce the method and apparatus of gas drying crystal wafer
abstract Disclose a kind of method with the proximity heads treatment substrate.This method starts from, and head is provided, and it has the head surface near the surface of this substrate.This head has width and length, and this has the port that a plurality of length along this become many row arrangement.Should many rows spread all over this width, and the first group of port that is configured to distribute first fluid arranged.With this first fluid be dispensed to this substrate this surface in case this substrate should the surface and this surface of this head between form meniscus.This method also comprises from this interface of second group of port between this meniscus and this substrate carries gaseous carbon dioxide.This carbon dioxide assists to promote to reduce the surface tension of this meniscus with respect to this substrate surface.
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