| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fec576c38e34882531ca37d6b922bf42 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31058 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2007-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_24abb2fc83f185c922d35ff6b8674350
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4161cfb9bea1c40dbecb83c6728ba15 |
| publicationDate |
2009-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-101606235-A |
| titleOfInvention |
The modifier of film having low dielectric constant and production method thereof |
| abstract |
Disclose a kind of modifier, it is used to reduce the relative dielectric constant of the film having low dielectric constant that is used for semiconductor device.Particularly, disclose a kind of modifier that is used for film having low dielectric constant, it is characterized in that, it comprises silicon compound by formula (1) expression as active ingredient: Rn 3-n Hn n SiNn 3 (1), wherein R represents the C1-C4 alkyl; N represents 0 to 3 integer. |
| priorityDate |
2007-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |