Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-387 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
filingDate |
2008-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2013-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1fe5f13e65186e286a1be1541d05dd5 |
publicationDate |
2013-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-101601144-B |
titleOfInvention |
Optoelectronic semiconductor chip, and method for the production of a contact structure for such a chip |
abstract |
Disclosed is an optoelectronic semiconductor chip (1) comprising a semiconductor member (2) that has a succession of semiconductor layers with an active area (3) which is suitable for generating radiation. The semiconductor chip further comprises: - a radiation-permeable and electrically conductive contact layer (6) that is arranged on the semiconductor member (2), is connected in an electrically conducting manner to the active area (3), and adjoins a structured connecting layer (4) which is applied to the semiconductor member (2); and - an electrode (14) that has a connecting area (140) and is disposed on the semiconductor member (2) on the side of the active region (3) which faces away from the barrier layer (5). The entire surface of the contact layer (6) adjoins the barrier layer (5) in an area of the barrier layer (5) which is covered by the connecting area (140) of the electrode (14). |
priorityDate |
2007-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |