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grantDate 2014-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2fb3169be5d7171609cb1ef3efd7c751
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publicationDate 2014-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-101546792-B
titleOfInvention Methods for forming multiple-layer electrode structures for silicon photovoltaic cells
abstract Methods for forming a photovoltaic cell electrode structure, wherein the photovoltaic cell includes a semiconductor substrate having a passivation layer thereon, includes providing a plurality of contact openings through the passivation layer to the semiconductor substrate, selectively plating a contact metal into the plurality of contact openings to deposit the contact metal, depositing a metal containing material on the deposited contact metal, and firing the deposited contact metal and the deposited metal containing material. The metal containing material may include a paste containing a silver or silver alloy along with a glass frit and is substantially free to completely free of lead. The methods may also use light activation of the passivation layer or use seed layers to assist in the plating.
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