| abstract |
The present invention is to provide a manufacturing method of a group III nitride compound semiconductor light-emitting element for producing an element that has superior light emission characteristics, while exhibiting superior productivity, and to provide the group III nitride compound semiconductor light-emitting element and a lamp. According to the method, an intermediate layer 12 comprising a group III nitride compound is formed on a substrate 11, by activating a metal material and gas containing a group V element by plasma and causing reaction, and an n-type semiconductor layer 14 comprising a group III nitride compound semiconductor, a light-emitting layer 15, and a p-type semiconductor layer 16 are sequentially laminated on the intermediate layer 12; and in this manufacturing method, the group V element is nitride and the molar fraction of nitrogen gas in the gas is set to be in a range of 20-99%, when the intermediate layer 12 is formed. |