http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101488471-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T156-17 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-187 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2009-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-101488471-B |
| titleOfInvention | Manufacturing method and manufacturing apparatus of semiconductor substrate |
| abstract | It is an object to provide a homogeneous semiconductor substrate in which defective bonding is reduced. Such a semiconductor substrate can be formed by the steps of: disposing a first substrate in a substrate bonding chamber which includes a substrate supporting base where a plurality of openings is provided, substrate supporting mechanisms provided in the plurality of openings, and raising and lowering mechanisms which raise and lower the substrate supporting mechanisms; disposing a second substrate over the first substrate so as not to be in contact with the first substrate; and bonding the first substrate to the second substrate from an edge angle part which is applied pressure by using the raising and lowering mechanisms to raise the substrate supporting mechanisms. |
| priorityDate | 2008-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 57.