http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101475804-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f6e1bb04572a914b36fca11f8feec284 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d350974edf6f3178f9ee8633e064341b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-79 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-81 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-86 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-24 |
| filingDate | 2008-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3a91d27dcc57429377e440a2206a514 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a31edff9bf417a9dd65582952078b187 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e888c76131647c915f4c261eaf0e4c3 |
| publicationDate | 2013-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-101475804-B |
| titleOfInvention | Orthosilicate green phosphor for light emitting diode and preparation thereof |
| abstract | The invention relates to the field of radiation materials, in particular to orthosilicate fluorescent powder. Part of O<-2> in a silanoxide tetrahedron is replaced, the orthosilicate fluorescent powder has a P2nn crystal structure and gives off green radiation under the strong shortwave radiation excitation of InGaN heterojunction, wherein the maximum spectrum depends on the interrelation between the amount of Me<+2> or Ln<+2, 3> in a cation crystal lattice, and the intensity is determined by the amount of the atom O<-2> in the component which is replaced in the V, the VI and the VII families and is taken from the series of F, Cl, Br, I, S, Se, N and P. The orthosilicate fluorescent powder has two excitation wave zones of which the range is between 360 and 400 nanometers and between 450 and 490 nanometers, and the materials are used for establishing a bright and effective green LED by using a nitride heterojunction as a substrate. |
| priorityDate | 2008-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.