| abstract |
Process for manufacturing a semiconductor power device, wherein a trench (8) is formed in a semiconductor body (2) having a first conductivity type; the trench is annealed for shaping purpose (8a) ; and the trench (8a) is filled with semiconductor material via epitaxial growth so as to obtain a first column (9) having a second conductivity type. The epitaxial growth is performed by supplying a gas containing silicon and a gas containing dopant ions of the second conductivity type in presence of a halogenide gas and occurs with uniform distribution of the dopant ions. The flow of the gas containing dopant ions is varied according to a linear ramp during the epitaxial growth; in particular, in the case of selective growth of the semiconductor material in the presence of a hard mask, the flow decreases; in the case of non-selective growth, in the absence of hard mask, the flow increases . |