http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101432854-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47cc435e1d443f13180f7766df104d9d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2007-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2011-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62832d171fc3c803d88e1f7a234b71f1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33400b2d2d56f58dde727ac89a023e44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cf2227bd01a4fc8805b0e6e2db9a897 |
| publicationDate | 2011-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-101432854-B |
| titleOfInvention | Polishing liquid for CMP and method of polishing |
| abstract | The present invention provides a CMP polishing liquid which is characterized in that the CMP polishing liquid is used in a second chemical mechanical grinding procedure after the first chemical mechanical grinding procedure. The substrate of grinding procedure comprises the following components: an interlayer insulation film which comprises dents and projections, a barrier layer which covers the interlayer insulation film along the surface, and a conductive object layer which fills the dent and covers the barrier layer, wherein the first chemical mechanical grinding procedure is grinding the conductive object layer of substrate for exposing the barrier layer of projection. The second chemical mechanical grinding procedure is grinding the exposed barrier layer for exposing the interlayer insulation film of projection. The difference (B)-(A) between grinding amount (A) and grinding amount (B) is less than 650 AA. The grinding amount (A) is the grinding amount of interlayer insulation film of field part which is formed on the interlayer insulation film part of substrate and has a width higher than 1000 [mu]m. The grinding amount (B) is the grinding amount of interlayer insulation filmin a stripe-shaped patterned area which is formed on the substrate and is formed by alternately arranging a wiring metal part with length of 90 [mu]m and the interlayer insulation film with width of 10 [mu]m. |
| priorityDate | 2006-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 202.