| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2008-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4fc3c8550aed2a5b71d754772e7dee7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7e611aea6969aec2815729ab492aff3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e39aadab32187fe938bb2aca0c4098b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_feb4eeea50bac514efdd1d5791d90249 |
| publicationDate |
2015-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-101409215-B |
| titleOfInvention |
Method for manufacturing SOI substrate and semiconductor device |
| abstract |
Provided is a method for manufacturing an SOI substrate of a semiconductor layer which can still be actually used even when a substrate with low heat resisting temperature such as glass substrate, etc. the semiconductor layer is changed into a support substrate by the following steps: using ions to irradiate the semiconductor chip from ions on a surface to form a damage layer; forming an insulating layer on surface of the semiconductor chip; attaching a surface of the support substrate onto the insulating layer formed on the semiconductor chip, performing heat treatment to bond the support substrate onto the semiconductor chip; dividing as a semiconductor chip and a support substrate at the point of the damage layer. Partly residual damage layer on the semiconductor layer is removed by wet etching and the use of laser beam irradiation on the surface of the semiconductor layer. |
| priorityDate |
2007-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |