http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101359693-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_099413ae0cf5a2b6398b5151766cd260 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1362 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2008-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2013-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b6ae21fba582cd20513d13bb72167fc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cfa41f87c4c27e907bbfadd00c1ce5f1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bba5e95326530a64dfba980d03b0cda http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_55ef80e874f939833d406351b7c112e1 |
| publicationDate | 2013-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-101359693-B |
| titleOfInvention | Thin film transistor, array substrate having the transistor, and method of manufacturing the array substrate |
| abstract | A thin-film transistor includes a semiconductor pattern, source and drain electrodes and a gate electrode, the semiconductor pattern is formed on a base substrate, and the semiconductor pattern includes metal oxide. The source and drain electrodes are formed on the semiconductor pattern such that the source and drain electrodes are spaced apart from each other and an outline of the source and drain electrodes is substantially same as an outline of the semiconductor pattern. The gate electrode is disposed in a region between the source and drain electrodes such that portions of the gate electrode are overlapped with the source and drain electrodes. Therefore, leakage current induced by light is minimized. As a result, characteristics of the thin-film transistor are enhanced, after-image is reduced to enhance display quality, and stability of manufacturing process is enhanced. The invention also provides an array substrate and a manufacturing method. |
| priorityDate | 2007-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 85.