| abstract |
The invention relates to a method for forming an etch stop layer, which comprises an etch stop layer formed on a substrate; the etch stop layer is silicon nitride, the stress range of which is from -1, 600 to -2, 000MPa and the stress of which is compressive stress. The invention further provides a structure of a semiconductor device and a manufacturing method thereof. The invention adopts the silicon nitride with a high stress as the etch stop layer. As the silicon nitride has a relative high compactness, and at the same time, the compressive stress of the silicon nitride with a high stress can neutralize a tensile stress of a dielectric layer with a low specific inductive capacity, interface characteristics between the dielectric layer and the dielectric layer, Cu and the dielectric layer are changed, thus realizing the object of increasing the breakdown voltage between layers of the dielectric layer and the reliability of the device. |