| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1296
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K2101-006 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-0738
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-0884
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78675
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-066
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B23K26-0626
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02678
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02691 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2007-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_574770affb55013cbbc9aaa82f88e9f4 |
| publicationDate |
2008-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-101136438-A |
| titleOfInvention |
Thin film transistor and manufacturing method and semiconductor device |
| abstract |
The invention provides a crystalline semiconductor film which grain boundary is consistent in one direction by the laser crystallization method and a producing method thereof. When the semiconductor film formed on the substrate is crystallized by a line laser, a phase-shift mask is used, concavo-convex to strip. The strip shape concavo-convex formed on the phase-shift mask is almost vertical to the long axle direction of the line laser. A continuous oscillation laser is used, whose scan direction is almost parallel to the direction of the strip shape concavo-convex (groove). The altering of the laser brightness periodically in the long axle direction may control the generation position of the crystalline core of the completely melted semiconductor film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11672148-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10872947-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10879331-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11004925-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10763322-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103117212-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107924827-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104538404-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104538404-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107924827-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10854697-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103117212-A |
| priorityDate |
2006-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |