http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-101135849-A

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filingDate 2007-08-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3b45166a0aef2fd043cbadf70b72fc6
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publicationDate 2008-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-101135849-A
titleOfInvention Resistdeckfilm ausbildendes material, ausbildungsverfahren fur resiststruktur, und elektronische vorrichtung und verfahren zum herstellen derselben
abstract The present invention provides a material which includes: a siliceous polymer which has at least one alkaline solubility group and is represented by the Formula (1); and organic solvent which can dissolve the siliceous polymer, the Formula (1) is: (SiO4/2)a(R1tSiO(4-t)/2)b(O1/2R2)c, wherein, R1 represents at least one of the single valence organic group, the hydrogen atom and the hydroxyl radical; R2 represents at one of the single valence organic group and the hydrogen atom (wherein, the R1 and R2 can respectively appear twice or more than twice, and at least one of the R1 and R2 contains alkaline solubility group), 't' represents an integer from 1 to 3; 'a', 'b' and 'c' represent the relative proportion the units (wherein, a, b and c are all more than or equal to 0 and not 0 at the same time), and (R1tSiO(4-t)/2)b can appear twice or more than twice.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104911590-A
priorityDate 2006-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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