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filingDate 2007-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2009-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1639915f7f02c0567d32f63b84bdd27
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publicationDate 2009-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-100557836-C
titleOfInvention Light emitting semiconductor device and manufacture method thereof
abstract The present invention relates to a kind of light emitting semiconductor device and manufacture method thereof, this light emitting semiconductor device comprises the substrate with two first type surfaces; Form portion with the active layer of being made by compound semiconductor materials, this active layer formation portion is formed on the first type surface in the described first type surface and comprises active layer.Form a plurality of holes of passing active layer from the upper surface of described active layer formation portion; A plurality of hollow bulbs corresponding to each hole are provided between described active layer and described substrate; With on plan view, the area of each hollow bulb is greater than the area in the hole of correspondence, and spreads on the lower surface of described active layer formation portion, thereby exposes the part of the lower surface of the described active layer formation portion that covers described hollow bulb on plan view.
priorityDate 2006-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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