| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9884b2360f2413d7edea0d5af39f775a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-32257
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-8592 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-50 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-50 |
| filingDate |
1997-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5112dbd4534ce4dea25ec0e30d4ae6d9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d41304ae3263e9076d65a013a4a22ce7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c543c33cd7c4cb8bca8a2167a0ae1de5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e3e73db8d02744663156feedc68cb24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5f445a31dbeaa1ed273e0ffc5acc5d83
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51814c04259f2ddcd62b2ef7aac01993
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a932e67c753388912746868c19441630 |
| publicationDate |
2009-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-100557833-C |
| titleOfInvention |
Luminous semiconductor device and the device that contains this luminous semiconductor device |
| abstract |
The present invention relates to luminous semiconductor device and the device that contains this luminous semiconductor device.For improveing this luminous semiconductor device, according to the present invention, it has a semiconductor multilayer structure, is suitable for launching when semiconductor device is worked the electromagnetic radiation of first wavelength period.The ray that luminous inverting element will come from first wavelength period is transformed into the ray of second wavelength period that is different from this first wavelength period and this ray is sent, and makes this semiconductor device launch to comprise the mixed-color light of visible electromagnetic radiation of the visible electromagnetic radiation of described first wavelength period and described second wavelength period.The ray that semiconductor body sends has the relative intensity maximum when wavelength X≤520nm, the wavelength period that is selectively absorbed by described luminous inverting element spectrum is positioned at outside this maximum of intensity.Can adopt the simple process method to produce in enormous quantities thus, can guarantee the reproducibility feature of device again to the full extent. |
| priorityDate |
1996-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |