http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100539070-C
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2005-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-100539070-C |
| titleOfInvention | The manufacture method of dual damascene interconnection |
| abstract | In a kind of method of making dual damascene interconnection, guaranteed reliable groove contour.This method comprises: form the lower interconnect parts on substrate, on the lower interconnect parts, form dielectric layer, on dielectric layer, form hard mask, by using hard mask in dielectric layer, to form through hole as etching mask, form the trench hard mask that defines groove by hard mask being carried out composition, form the groove that is connected with through hole, use trench hard mask to form upper interconnect wirings therein as the partially-etched dielectric layer of etching mask, and use wet etching to remove trench hard mask, and by using interconnection material filling groove and through hole to form upper interconnect wirings. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103824806-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103021930-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103021930-B |
| priorityDate | 2004-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.