http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-100536191-C
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6a6f422b091ba12ea61d4adbf1b0e8e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48 |
| filingDate | 2008-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2009-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96d331d6d812e98acdaba14a32c2654b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c67a91dce1bb0662f95e906f6812df6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f76b67abf9e2b42b8b1aa5a175843c7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6c57e7e9f2ce1b6a8857abb30ef7185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7c9165ac1e9cde20b69a14f68c14e4e7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90ae73f8c67256027b6dbddf37dd1480 |
| publicationDate | 2009-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-100536191-C |
| titleOfInvention | Method for preparing stephanoporate silicon/DPP photoelectricity composite material |
| abstract | The invention discloses a method for preparing porous silicon/DPP photoelectrical compound material, comprising: washing off the oil stain on monocrystalline silicon wafer, carrying out ultrasonic treatment on the monocrystalline silicon wafer in acetone, alcohol and deionized water respectively, then drying; washing SiO<SUB>2</SUB> on surface of the dried monocrystalline silicon wafer with hydrofluoric acid, sputtering a gold film on the back of the treated monocrystalline silicon wafer; under power-on state, putting the monocrystalline silicon wafer coated with gold film and a platinum sheet in electrolyte to carry out electrochemical corrosion, respectively as anode and cathode; under power-on state, by using the monocrystalline silicon wafer as the cathode and the platinum sheet as anode after the corrosion, immerging the two in DPP saturated solution containing trifluoroacetic acid to carry out electrochemical deposition, vacuum-drying the monocrystalline silicon wafer deposited with DPP. The manufacturing method according to the invention has simple procedure; the porous silicon can match with DPP energy level structure; thus, the porous silicon/DPP photoelectrical compound material can be widely applied in photovoltaic devices field. |
| priorityDate | 2008-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.