| abstract |
A 3-5 group compound semiconductor which has a substrate, a buffer layer represented by a general formula: InuGavAlwN, wherein 0 <= u, v and w <= 1, and u + v + w = 1, formed on the substrate and a crystalline layer of a 3-5 group compound semiconductor represented by a general formula: InxGayAlzN, wherein 0 <= x, y and z <= 1, and x + y + z = 1, formed on the buffer layer, characterized in that said buffer layer has a film thickness of 5 to 90 AA; and (2) a method for preparing the 3-5 group compound semiconductor, characterized in that it comprises an initial step of growing the buffer layer represented by the general formula: InuGavAlwN so as for the layer to have a film thickness of 5 to 90 AA at a temperature lower than that for the growth of the crystalline layer of the 3-5 group compound semiconductor and a subsequent step of growing said crystalline layer of the 3-5 group compound semiconductor represented by the general formula: InxGayAlzN. |