| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0046 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F20-28 |
| filingDate |
2002-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2009-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c573a93c709678fbc3447d0cbe15cb11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42d9f9060be2c4148c4016de63654b00 |
| publicationDate |
2009-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-100465784-C |
| titleOfInvention |
Photosensitive ray composition and pattern forming method and method for mfg. semiconductor device |
| abstract |
There is provided a negative radiation-sensitive composition, which is suitable for exposure of a far ultraviolet light comprising a wavelength 193 nm of ArF excimer-laser, freed from causes of resolution deterioration such as swelling due to permeation of a developer and residual of a resist film between lines of the pattern, and capable of forming a high resolution pattern. The radiation-sensitive composition comprises a polymer of an acrylic acid ester having a gamma-hydroxycarboxylic acid in its ester moiety and a photo-acid generator. |
| priorityDate |
2001-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |