| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2006-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2008-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65238addd6f01125528d7407a553ca9f |
| publicationDate |
2008-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-100442474-C |
| titleOfInvention |
Method of manufacturing semiconductor device |
| abstract |
Disclosed herein is a method of manufacturing a semiconductor device, including the steps of: forming an interlayer insulating film on a semiconductor substrate; forming a metal mask on the interlayer insulating film; forming a pattern trench in the metal mask and the interlayer insulating film by etching away parts of the metal mask and the interlayer insulating film; forming a conductive layer on the interlayer insulating film so as to fill in the pattern trench; and polishing the excessive conductive layer and the metal mask on the interlayer insulating film so as to leave the conductive layer in the pattern trench. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107910293-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107910293-A |
| priorityDate |
2005-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |