| abstract |
The present invention discloses a method for repairing wire bonding damage to semiconductor chips such as high speed semiconductor microprocessors, application specific integrated circuits (ASIC) and other high speed integrated circuit devices, particularly devices for using low k dielectric materials. The present invention has the steps of surface modification by reaction liquid. In a preferable embodiment, the present invention has the steps that siliceous liquid reagent precursors such as TEOS are coated on the surface of the chip, and the liquid reagent is allowed to react with moisture for forming solid dielectric plugs or films (50) in order to generate a blocking layer for preventing the moisture from entering the chip, so the temperature / humidity / bias (THB) performance of the semiconductor device is improved. |