http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CH-710975-B1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6fadfbd13d7896302530064109178597 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2031 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-06258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3402 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 |
| filingDate | 2015-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c81a341086c63483b493237d0e7938a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3172178de1d06601b7bba8bb585cce9d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36868a031cf591c1cd3430a88ef2eabd |
| publicationDate | 2019-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CH-710975-B1 |
| titleOfInvention | Passive waveguide structure with alternating GaInAs / AlInAs layers for mid-infrared optoelectronic devices. |
| abstract | The invention relates to an optical semiconductor emitter operable in an optical mode and having a gain portion, the emitter comprising a semiconductor waveguide structure made up of two alternating layers of semiconductor materials A, B having refractive indices of N a and N b , having an effective refractive index N o of the optical mode in the low-loss waveguide between N a and N b, the waveguide structure being transparent to light emitted from the amplifying section, wherein the ratio of the thickness of the materials A and B is chosen to be the waveguide structure with the effective refractive index N 0, which is identical to the refractive index of the gain region or within a defect range of 5% compared to the refractive index of the amplification section, the amplification region being on impact adjacent to the low-loss waveguide, and wherein the size and shape of the optical modes in the low loss waveguide structure and in the gain region are equal or within a 10% error range. Desirably, at least one of the semiconductor materials A and B should have a sufficiently large bandgap so that the passive waveguide structure blocks current at a voltage bias of 15V. |
| priorityDate | 2014-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.