http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CH-645673-A5
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1e07faa0fc2020fa61c4a699e05af9c3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-246 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-24 |
| filingDate | 1979-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b729decabc2c1c1e708e472986e29f56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21880daae2dd6016d34e9f3d7c2cf5ba http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9c9bffa99bd13fa092996909508d2f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86f8c2c9031fc0b8ff7d43dfd17bb419 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3eb9becb0dd9e4c6b1bc6d86dab5ec2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db693e2dfe671df83603fc38b1b1645d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_052288eb83d85a39d85804829037266a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce31d619a480ea020d121b2aa9fe521e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1b370f311cd9d1d6a1f7648cab44c15c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0f3d001d918ee8678bcc99ca14e20ae |
| publicationDate | 1984-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CH-645673-A5 |
| titleOfInvention | Process for vapour deposition of semiconductor layers on a substrate under vacuum, and device for carrying out the process |
| abstract | The process comprises introducing a starting material into the evaporators (3) which have been heated to a temperature below the boiling point of the starting material. The substance is introduced periodically, by each of the evaporators (3) being charged in succession. The dose is selected in such a way that it is just sufficient to cover the working area of the evaporators (3) uniformly and is completely evaporated during time T before the next charge. The number of evaporators (3) is divisible by the number of main fractions in the starting material. Charging is carried out at an interval equal to T DIVIDED n during a period which is smaller than said interval by a factor of 10 to 15. The material is vapour-deposited simultaneously from all the charged evaporators (3) in such a way that the molecular streams overlap in the condensation zone. The process proposed can be applied for generating homogeneous semiconductor layers having great lengths and large areas on a flexible substrate, and of layers having predefined compositions of fractionating materials. <IMAGE> |
| priorityDate | 1979-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.