http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-3142312-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8abb210936dc3b56af93e346a2335b7f |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-4824 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28587 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28575 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-201 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate | 2020-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8250747eaca701112ba3d967bb75a6c7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3372324e99ce08807093ada45904edac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8360b700865f9d4634bcae2c18be563c |
| publicationDate | 2020-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-3142312-A1 |
| titleOfInvention | Ohmic contacts with direct access pathways to two-dimensional electron sheets |
| abstract | An ohmic contact includes a first semiconductor layer a second semiconductor layer, and a heterointerface between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer has a two-dimensional electron sheet region in which a two-dimensional electron sheet is formed. The ohmic contact further includes a metal terminal covering the first semiconductor layer and filling a plurality of direct access pathways that provide direct lateral contact with the two-dimensional electron sheet region. The semiconductor device is fabricated by providing the semiconductor layers, etching the direct access pathways, and depositing metal material to fill the direct access pathways and cover the semiconductor layers. The ohmic contact may be part of a high-electron-mobility transistor that achieves low contact resistance with either no annealing at all (as-deposited metal), or at an anneal temperature that is much lower than industry-standard anneal temperatures to achieve sufficiently low contact resistance. |
| priorityDate | 2019-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.