http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-3039366-A1

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filingDate 2019-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b9372ce55fd48bc771a177302f00457
publicationDate 2019-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CA-3039366-A1
titleOfInvention Method of manufacturing a garnet type crystal
abstract Provided are a practical method for manufacturing TAG single crystal. The method of manufacturing a garnet type crystal brings a raw material solution into contact with a substrate formed of a Y3Al5O12 crystal or a Dy3Al5O12 crystal and performs liquid phase epitaxial growth. The garnet type crystal is represented by (Tb3-x-y R x Bi y)Al5O12 (R is one or more elements selected from Y or a lanthanoid (La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu), 0<= x, and 0 <= y)).
priorityDate 2018-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 27.