http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2798926-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f07aa0e806c7d769e0eef91c1e20dc47 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02363 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate | 2011-05-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b195d8a787ab30e4a25484089e99af9a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_847788688f323db3dc1754356a909cb0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4548fb7830c3d64707dff00018162454 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f2de614dd3659694ba03773cad746da |
| publicationDate | 2011-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-2798926-A1 |
| titleOfInvention | Etching solution and method for processing surface of silicon substrate |
| abstract | Disclosed is an etching solution which enables the formation of a silicon substrate having fine pyramid-like depressions and protrusions (a textured structure) in a steady manner without requiring the use of any conventional etching inhibitor such as isopropyl alcohol. Specifically disclosed is an etching solution in which a silicon substrate is to be immersed to form pyramid-like depressions and protrusions on the surface of the substrate, and which is characterized by comprising at least one component selected from compounds (A) each represented by general formula (1) and alkali salts thereof and an alkali hydroxide (B) at a concentration of 0.1 to 30 wt% inclusive. (In the formula, R represents one of an alkyl group, an alkenyl group and an alkynyl group each having 4 to 15 inclusive of carbon atoms; and X represents a sulfonic acid group.) By using the etching solution, it becomes possible to form a fine textured structure on the surface of a silicon substrate. |
| priorityDate | 2010-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 89.