http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2608285-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5cc531ab68ef1418eea1080df65de2b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3063 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2006-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee0de6b8de4f3b590c98ab12dea5da24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f2cb20653e3c8d9c8bcafd1089eb21d5 |
| publicationDate | 2006-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-2608285-A1 |
| titleOfInvention | Selective wet etching of oxides |
| abstract | The present invention relates to a wet etching composition including a sulfonic acid, a phosphonic acid, a phosphinic acid or a mixture of any two or more thereof, and a fluoride, and to a process of selectively etching oxides relative to nitrides, high-nitrogen content silicon oxynitride, metal, silicon or silicide. The process includes providing a substrate comprising oxide and one or more of nitride, high-nitrogen content silicon oxynitride, metal, silicon or silicide in which the oxide is to be etched; applying to the substrate for a time sufficient to remove a desired quantity of oxide from the substrate the etching composition; and removing the etching composition, in which the oxide is removed selectively. |
| priorityDate | 2005-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 280.