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filingDate 2005-07-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ded8152dd494795e9bb03b693f9cfef1
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publicationDate 2013-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CA-2572691-C
titleOfInvention Semiconductor element with a passivation layer and method for production thereof
abstract Semiconductor element that contains Al x Ga y In 1-x-y As y Sb 1-z, whereby the parameters x, y, and z are selected such that a bandgap of less than 350 meV is produced, whereby it features a mesa-structuring and a passivation layer containing AI n Ga 1-n AS m Sb 1-m is applied at least partially on at least one lateral surface of the structuring, and the parameter n is selected in the range of 0.4 to 1 and the parameter m in the range of 0 to 1.
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