| abstract |
The invention relates to the use of a metal complex as n-dopant for doping an organic semiconducting matrix material for modifying the electrical properties of the same, wherein the compound represents an n-dopant with regard to the matrix material. The aim of the invention is to provide n-doped organic semiconductors for matrix materials that have little reduction potential while achieving high conductivities. According to the invention, a neutral electron-rich metal complex having a central atom as the preferably neutral or charged transition metal atom having a valence electron number of at least 16 is used as the dopant compound. The complex can especially be multinuclear and comprises at least one metal-metal bond. At least one ligand can form a Pi complex with the central atom, or can be a bridging ligand, especially hpp, a borate, carborane or triazacycloalkane or comprise at least one carbanion carbon atom or a bivalent atom selected from the group including C (carbene), Si (silylene), Ge (germylene), Sn, Pb. The invention also relates to novel n-dopants and methods for producing them. |