| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_37f4922dfb7777b019e504b885211b8e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4e4027369eb1529e94db806289f07f22 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S427-106 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-105 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-10 |
| filingDate |
2003-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94c66fb89a63132d026556bbc4d3a54d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b8b2de59e5a1bdfc40ac14046cc8a2f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31a69e584849b531c38558b519b9a502
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_95fbce15c2bfb430b26613294098b303
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c14c1c0b028ba5029780a201d05e4674
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c3e47cff102c7d1e9ebd9959bab5775 |
| publicationDate |
2004-07-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-2512731-A1 |
| titleOfInvention |
High-speed diamond growth using a microwave plasma in pulsed mode |
| abstract |
Current methods for manufacturing diamond films by microwave--plasma-assisted chemical vapour deposition are of limited effectiveness since the large amounts of energy needed to obtain diamond of electronic quality at reasonable growth rates lead to heating of the walls on which hydrogen atoms contained in the plasma recombine and therefore cannot participate in the reaction. To solve this problem, there is provided a method of forming a plasma near a substrate by subjecting a gas containing at least hydrogen and carbon using a pulsed microwave plasma with a peak power density of at least 100W/cm3, while the temperature of the substrate is maintained between 700°C and 1000°C and the pressure of the plasma is maintained between 100mbar and 350mbar. Such a method allows manufacturing diamond at a high deposition rate while guaranteeing the electronic quality of the diamond film produced. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11162172-B2 |
| priorityDate |
2003-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |