| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1b49b135f099e96a0e4cab2427a48ae8 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N33-005 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-22 |
| filingDate |
2001-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6a5022860bac3f1d132be53dedcf3f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2caf7c28e47730d254b6049c7a1750f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99b5f39aecbcba24341d1eb2322c83c6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3be2ddbe74bb5cbd08ed377d56006bfb |
| publicationDate |
2001-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-2402776-A1 |
| titleOfInvention |
Mis hydrogen sensors |
| abstract |
Hydrogen gas sensors employ an epitaxial layer of the thermodynamically stable form of aluminum nitride (AIN) as the "insulator" in an MIS structure having a thin metal gate electrode suitable for catalytic dissociate of hydrogen, such as palladium, on a semiconductor substrate. The AIN is deposited by a low temperature technique known as Plasma Source Molecular Beam Epitaxy (PSMBE). When silicon (Si) is used the semiconducting substrate, the electrical behavior of the device is that of a normal nonlinear MIS capacitor. When a silicon carbide (SiC) is used, the electrical behavior of the device is that of a rectifying diode. Preferred structures are Pd/AIN/Si and Pd/AIN/SiC wherein the SiC is preferably 6H-SiC. |
| priorityDate |
2000-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |