http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2399895-A1

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b5ee93d55e837563f1cc5509aca8042
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-513
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-517
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filingDate 2000-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_909a54ec9ecf8b63d0244e2f410ba676
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4a3f96a46c05b1383e074fea72c3aa9
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publicationDate 2001-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CA-2399895-A1
titleOfInvention E-beam/microwave gas jet pecvd method and apparatus for depositing and/or surface modification of thin film materials
abstract A novel high speed, high quality plasma enhanced surface modification or CVD thin-film deposition method and apparatus. The invention employs both microwave (5) and e-beam energy (6) for creation of a plasma of excited species which modify the surface of substrates (2) or are deposited onto substrates to form the desired thin film. The invention also employs a gas jet system (3) to introduce the reacting species to the plasma. This gas jet system (3) allows for higher deposition speed than conventional PECVD processes while maintaining the desired high quality of the deposited materials.
priorityDate 2000-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 24.