Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2b5ee93d55e837563f1cc5509aca8042 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-517 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J7-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 |
filingDate |
2000-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_909a54ec9ecf8b63d0244e2f410ba676 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4a3f96a46c05b1383e074fea72c3aa9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd4187924f96a04085c3da542057812c |
publicationDate |
2001-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CA-2399895-A1 |
titleOfInvention |
E-beam/microwave gas jet pecvd method and apparatus for depositing and/or surface modification of thin film materials |
abstract |
A novel high speed, high quality plasma enhanced surface modification or CVD thin-film deposition method and apparatus. The invention employs both microwave (5) and e-beam energy (6) for creation of a plasma of excited species which modify the surface of substrates (2) or are deposited onto substrates to form the desired thin film. The invention also employs a gas jet system (3) to introduce the reacting species to the plasma. This gas jet system (3) allows for higher deposition speed than conventional PECVD processes while maintaining the desired high quality of the deposited materials. |
priorityDate |
2000-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |