http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2381503-A1

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filingDate 2000-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af4d0629b241f6550e3c239189cd71fe
publicationDate 2001-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CA-2381503-A1
titleOfInvention Copper deposit process
abstract Method and system for controllable deposit of copper onto an exposed surface of a workpiece, such as a semiconductor surface. A seed thickness of copper is optionally deposited onto the exposed surface, preferably using oxygen-free liquid ammonia to enhance this deposition. The workpiece exposed surface is then immersed in an electroplating solution, including copper and liquid ammonia at a suitable pressure and temperature, and copper is caused to plat e onto the exposed surface at a controllable rate. When the copper deposited o n the exposed surface reaches a selected total thickness, electroplating is discontinued, the electroplating solution is removed, and the gaseous and liquid ammonia are recovered and recycled for re-use.
priorityDate 1999-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 29.