| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_96eddd31165955882708d73c89118259 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-761 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-853
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N10-852
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B11-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L35-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B11-00 |
| filingDate |
1999-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2004-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d7ed79780beaf60419f644e6823bdeee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e0ae2db1b3166d0b4ae2ecda8492939
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7dafce24fc8b5b3d0f01a65e92ebe318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36c9988ca4c7a562dc6e968f259040d9 |
| publicationDate |
2004-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-2347429-C |
| titleOfInvention |
Conductive isostructural compounds |
| abstract |
A family of isostructural compounds have been prepared having the general formula A n PB m B in Q2n+m (figure 1). These compounds (figure 1) possess a NaCl lattice type structure (figure 1) as low thermal conductivity and controlled electrical conductivity. Furthermore, the electrical properties can be controlled by varying the values for n and m. These isostructural compounds can be used for semiconductor applications such as detectors, lasers and photovoltaic cells. These compounds also have enhanced thermoelectric properties making them excellent semiconductor materials for fabrication of thermoelectric devices. |
| priorityDate |
1998-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |