| abstract |
The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): Boric Acid 2-17 %, Organic amine or mixture of amines 35-70 %, Water 20-45 %, Glycol solvent (optional) 0-5 %, Chelating agent (optional) 0-17 %. The preferred amines are: Monoethanolamine (MEA), Triethanolamine (TEA). |