| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ac9a462aa0a6e155462df9431a59bd |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2226
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2215 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-227 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-227 |
| filingDate |
2000-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f248cbd9b9a239eca19781c5f6416608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d606ba8af83ffb2330895e96d6d36fb0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea4a16928c6399091ad9c40f09df0228 |
| publicationDate |
2002-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-2328641-A1 |
| titleOfInvention |
Confinement layer of buried heterostructure semiconductor laser |
| abstract |
A laser device having an improved electrical confinement has been disclosed. The confinement of laser is composed of a material of AlInAs doped with oxygen. Also, it may further comprises aluminum oxide (Al2O3), which may take the form of an aluminum oxide (Al2O3) layer formed along the interface between the confinement and neighboring components of the device. |
| priorityDate |
2000-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |