http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2318758-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5bc5292a07e34d16eb1d033a16d3aec3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S3-08059 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-14 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-14 |
| filingDate | 1998-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ac9ff318be338f301337d16eeabfe4a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0667f39abcdd068c0628e4a0eb1119e5 |
| publicationDate | 1999-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-2318758-A1 |
| titleOfInvention | Gaussian profile promoting cavity for semiconductor laser |
| abstract | A system and method for generating a laser beam from a semiconductor laser (10) in order to eliminate or substantially reduce filamentation of the laser beam. The system and method utilizes an external optical member such as a reflector (22) to improve or enhance the overall laser beam quality produced. The reflector (22) has a Gaussian intensity profile promoting cavity such as a parabolic cavity (24), with the cavity (24) having a focal length (f) a preselected distance from the cavity surface. The semiconductor laser (10) is positioned such that the facet of the semiconductor laser (10) is at the focal length distance (f) from the cavity surface. The cavity (24) has a modeselecting reflective surface such that the beam has a substantially Gaussian intensity profile. A beam splitter can be optionally employed between the semiconductor laser (10) and the optical reflector (22) for certain applications if desired. Alternatively, an external digital optics member can be employed with a semiconductor laser (10) to produce a beam with a substantially Gaussian intensity profile. |
| priorityDate | 1998-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.