| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_260220c525b214105ee48ee2d77a5bf4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-143 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02351
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02137
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02134 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08J3-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| filingDate |
1998-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7d1b5eef28bfb20a952bd8f005bf2a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_77814ba3ce00f6fff1629c8de45e0379
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fe7d6940b64461fdbbd923b1ace0d2c8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aab6b14c276d17d1bef61e6773920d9e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d58312edba0f6781f521f1e37aa8d10 |
| publicationDate |
1998-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CA-2284760-A1 |
| titleOfInvention |
Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation |
| abstract |
A process for the preparation of substrates used in the manufacture of integrated circuits wherein spin-on low dielectric constant (low-k) polymer films are applied on semiconductor substrates. A non-etchback processing of spin-on low-k polymer films, without losing the low dielectric constant feature of the film, especially inbetween metal lines, is achieved utilizing electron beam radiation. A polymeric dielectric film (7, 8) is applied and dried onto a substrate and exposed to electron beam radiation under conditions sufficient to partially cure the dielectric layer. The exposing forms a relatively more hardened topmost portion (8) of the dielectric layer and a relatively less hardened underlying portion (7) of the dielectric layer. |
| priorityDate |
1997-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |