| abstract |
A susceptor for semiconductor manufacturing equipment obtained by laminating plural aluminum nitride (A1N) ceramic substrates with a high melting point metallic layer and an adhesive layer, and in particular, the aluminum nitride (A1N) ceramic substrate contains a compound of a Group 3a element in an amount of from 0.01 to 1% by weight in terms of the element, and the balance consisting essentially of aluminum nitride (A1N), in which the average particle size of an A1N crystal is from 2 to 5 µm. The susceptor is prepared by obtaining substrates from a mixture of the material powders through the steps of molding, sintering in a non-oxidizing atmosphere at 1,600 to 2,000°C and forming into a desired substrate shape, and then laminating a plurality of the thus obtained substrate.with a high melting point metallic layer and an adhesive layer inserted between the substrates, firing the laminate in a non-oxidizing atmosphere at 1,500 to 1,700° and finishing the fired laminate. |