http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2259395-C
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b27deaf45890893586c2ed77ac13dc32 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T117-1024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S117-919 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-58 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B7-00 |
filingDate | 1997-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2002-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60cae86c1027bfdeb15d6777d1c920f1 |
publicationDate | 2002-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CA-2259395-C |
titleOfInvention | Equipment for crystal growth and crystal-growing method using the same |
abstract | Provided are an apparatus and a method which can accelerate crystallization of a biological macromolecule such as protein. A plurality of solution storage parts (12a, 12b, 12c, 12d, 14) are formed on a silicon substrate whose valence electrons are controlled by controlling the concentration and/or the type of impurity. These solution storage parts are connected with each other by passages (16a, 16b, 16c, 26). The storage part (12d) is made to hold a buffer solution containing molecules of protein or the like to be crystallized. The storage parts (12a, 12b, 12c) are also made to hold solutions capable of accelerating crystallization of protein or the like respectively. These solutions are shifted to the solution storage part (14) through the passages (l6a, 16b, l6c, 26) for preparing a mixed solution in a different ratio in each storage part (14). Thus, different conditions for crystallization can be simultaneously formed in a short time with a small amount of sample. A crystal of protein or the like is grown in the storage part (14) holding the mixed solution. Growth of the crystal is controlled by the electric properties which are brought to the silicon substrate surface by the valence electron control. |
priorityDate | 1996-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 205.