http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CA-2228168-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_948d7b039296a69d678c8423c95ca22f |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67057 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67034 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate | 1996-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10a48b94c412f5233584359360d54375 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5446f9cf520677289ec0f534d0950c05 |
| publicationDate | 1997-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CA-2228168-A1 |
| titleOfInvention | Procedure for drying silicon |
| abstract | The invention relates to a procedure applicable for drying substrate surfaces of a large number of materials, such as semiconductors, metals, plastics and, in particular, silicon. The silicon (1) is dipped into a liquid bath (2) and the silicon (1) is separated from the liquid (3), the liquid of the bath (2) consisting of an aqueous HF solution (3) with a concentration between .001 and 50 %. By adding a gas mixture containing O2/O3 immediately after the drying process is finished, the silicon surface is hydrophilized. By adding a gas mixture containing O2/O3 during the drying process, cleaning takes place as the ozone enters the solution on the liquid surface. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2486287-C2 |
| priorityDate | 1995-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.